您的当前位置:首页正文

SP8J1资料

来源:华佗健康网
元器件交易网www.cecb2b.com

SP8J1

Transistors

Switching (−30V, −5.0A)

SP8J1

zFeatures

1) Low On-resistance. (40mΩ at 4.5V) 2) High Power Package. 3) High speed switching. 4) Low voltage drive. (4.5V)

zApplications

Power switching, DC-DC converter

zStructure

Silicon P-channel MOS FET

zPackaging specifications PackageTypeSP8J1CodeBasic ordering unit (pieces)TapingTB2500(1)∗1∗1zExternal dimensions (Unit : mm)

SOP8(5)(4)0.43.96.00.20.4Min.Each lead has same dimensions1.751.27(8)(1)5.0

zEquivalent circuit

(8)(7)(6)(5)∗2∗2(1) Tr1 Source(2) Tr1 Gate(3) Tr2 Source(4) Tr2 Gate(5) Tr2 Drain(6) Tr2 Drain(7) Tr1 Drain(8) Tr1 Drain

(2)(3)(4)∗1 ESD PROTECTION DIODE∗2 BODY DIODE1/4

元器件交易网www.cecb2b.com

SP8J1

Transistors

zAbsolute maximum ratings (Ta=25°C)

ParameterDrain-source voltageGate-source voltageDrain currentSource current (Body diode)Total power dissipationChannel temperatureRange of Storage temperature∗1 Pw≤10µs, Duty cycle≤1%∗2 Mounted on a ceramic boardContinuousPulsedContinuousPulsedSymbolVDSSVGSSIDIDPISISPPDTchTstgLimits−30±20±5.0±20−1.6−202.0150−55 to +150UnitVVAAAAW°C°C∗1∗1∗2

zElectrical characteristics (Ta=25°C)

ParameterSymbolMin.Typ.−−−−304045−140030023015308040163.56.5Max.±10−−1−2.5425663−−−−−−−−−−−IGSSGate-source leakage−Drain-source breakdown voltageV(BR) DSS−30Zero gate voltage drain current−IDSSGate threshold voltageVGS (th)−1.0−Static drain-source on-state−RDS (on)resistance−4.5YfsForward transfer admittance−CissInput capacitance−CossOutput capacitance−Reverse transfer capacitanceCrss−Turn-on delay timetd (on)−Rise timetr−Turn-off delay timetd (off)−Fall timetf−Total gate chargeQg−Gate-source chargeQgsGate-drain charge−Qgd∗Pulsed

UnitµAVµAVmΩmΩmΩSpFpFpFnsnsnsnsnCnCnCConditionsVGS=±20V, VDS=0VID= −1mA, VGS=0VVDS= −30V, VGS=0VVDS= −10V, ID= −1mAID= −5.0A, VGS= −10VID= −2.5A, VGS= −4.5VID= −2.5A, VGS= −4.0VVDS= −10V, ID= −2.5AVDS= −10VVGS=0Vf=1MHzID= −2.5AVDD −15VVGS= −10VRL=6ΩRGS=10ΩVDD −15VVGS= −5VID= −5.0A∗∗∗∗∗∗∗∗Body diode characteristics (source-drain characteristics)VSD−−−1.2Forward voltageV IS= −1.6A, VGS=0V

2/4

元器件交易网www.cecb2b.com

SP8J1

Transistors

zElectrical characteristic curves

VDS= −10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CSTATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)Ta=25°CPulsedVGS= −4VVGS= −4.5VVGS= −10VSTATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)

DRAIN CURRENT : −ID (A)10

1000

1000Ta=125°CTa=75°CTa=25°CTa= −25°CVGS= −10VPulsed

11001000.110100.010.0010.00.51.01.52.02.53.03.54.010.111010.1110GATE-SOURCE VOLTAGE : −VGS (V)DRAIN CURRENT : −ID (A)DRAIN CURRENT : −ID (A)Fig.1 Typical Transfer CharacteristicsFig.2 Static Drain-Source On-StateResistance vs. Drain CurrentFig.3 Static Drain-Source On-StateResistance vs. Drain Current

STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)REVERSE DRAIN CURRNT : −IDR (A)VGS= −4.5VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CSTATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (mΩ)10001000Ta=125°CTa=75°CTa=25°CTa= −25°CVGS= −4VPulsed

10VGS=0VPulsed

1001001Ta=125°CTa=75°CTa=25°CTa= −25°C10100.110.111010.11100.010.00.51.01.5DRAIN CURRENT : −ID (A)DRAIN CURRENT : −ID (A)SOURCE-DRAIN VOLTAGE : −VSD (V)Fig.4 Static Drain-Source On-State vs. Drain CurrentFig.5 Static Drain-Source On-State vs. Drain CurrentFig.6 Reverse Drain CurrentSource-Drain Current

GATE-SOURCE VOLTAGE : −VGS (V)

10000SWITCHING TIME : t (ns)Ta=25°Cf=1MHzVGS=0VCiss10000CAPACITANCE : C (pF)10001000tftd (off)100Ta=25°CVDD= −15VVGS= −10VRG=10ΩPulsed876543210Ta=25°CVDD= −15VID= −5.0ARG=10ΩPulsed

100CossCrsstd (on)10tr100.010.111010010.010.111001234567891011121314151617181920DRAIN-SOURCE VOLTAGE : −VDS (V)DRAIN CURRENT : −ID (A)TOTAL GATE CHARGE : Qg (nC)Fig.7 Typical Capacitancevs. Drain-Source VoltageFig.8 Switching CharacteristicsFig.9 Dynamic Input Characteristics

3/4

元器件交易网www.cecb2b.com

SP8J1

Transistors

zMeasurement circuits

VGSIDRLD.U.T.RGVDDVDStd(on)ton90%10%trtd(off)toffVDSVGS10%90%90%10%trFig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms

VGVGSIDRLIG(Const.)RGVDDD.U.T.VDSQgVGSQgsQgdChargeFig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform

4/4

元器件交易网www.cecb2b.com

Appendix

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.Products listed in this document use silicon as a basic material.Products listed in this document are no antiradiation design.The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.About Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to \"objective\" criteria or an \"informed\" (by MITI clause)on the basis of \"catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0

因篇幅问题不能全部显示,请点此查看更多更全内容