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BUR52

HIGH CURRENT NPN SILICON TRANSISTOR

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SGS-THOMSON PREFERRED SALESTYPENPN TRANSISTOR

MAINTAINS GOOD SWITCHINGPERFORMANCE EVEN WITHOUTNEGATIVE BASE DRIVE

APPLICATIONS sLINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPNtransistors in modified Jedec TO-3 metal case,intented for use in switching and linearapplications in military and industrial equipment.

12TO-3(version \" P \")INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SymbolVCBOVCEOVEBOICICMIBPtotTstgTjJune 1997

ParameterCollector-Base Voltage (IE = 0)Collector-Emitter Voltage (IB = 0)Emitter-Base Voltage (IC = 0)Collector CurrentCollector Peak Current (tp = 10 ms)Base CurrentTotal Dissipation at Tc ≤ 25 oCStorage TemperatureMax. Operating Junction TemperatureValue35025010608016350-65 to 200200UnitVVVAAAWooCC1/4

BUR52

THERMAL DATA

Rthj-caseThermal Resistance Junction-case Max0.5oC/WELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

SymbolICBOICEOIEBOParameterCollector Cut-offCurrent (IE = 0)Collector Cut-offCurrent (IB = 0)Emitter Cut-off Current(IC = 0)Test ConditionsVCB = 350 VVCB = 350 V Tcase = 125 oCVCE =250 VVEB = 7 V IC = 200 mAIE = 10 mAIC = 25 A IB = 2 AIC = 40 A IB = 4 AIC = 25 A IB = 2 AIC = 40 A IB = 4 AIC = 5 A VCE = 4 VIC = 40 A VCE = 4 VVCE = 20 V t = 1 s IC = 1 A VCE = 5 V f = 1 MHz IC = 40 A IB1 = 4 AVCC = 100 VIC = 40 A IB1 = 4 AIB2 = -4 A VCC = 100 VVclamp = 250 V L = 500 µH Min.Typ.Max.0.2210.2UnitmAmAmAµAVVVCEO(sus)∗Collector-EmitterSustaining VoltageVEBOVCE(sat)∗VBE(sat)∗hFE∗Is/bfTtontstfEmitter-base Voltage(IC = 0)Collector-emitterSaturation VoltageBase-emitterSaturation VoltageDC Current GainSecond BreakdownCollector CurrentTransition-FrequencyTurn-on TimeStorage TimeFall TimeClamped Es/b CollectorCurrent2501011.51.821000.71.5201517.5100.31.20.240VVVVA16120.6MHzµsµsµsA∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %2/4

BUR52

TO-3 (version P) MECHANICAL DATAmmMIN.ABCDEGNPRUV11.001.452.78.919.0010.7016.5025.003.8838.5030.00TYP.11.71.5MAX.13.101.60MIN.0.4330.0570.1060.3500.7480.4210.6500.9840.1531.5161.181inchTYP.MAX.DIM. 0.516 0.063 0.115 0.370 0.7870.4290.6650.4370.677 2.92 9.4 20.0010.9 11.1016.9 17.20 26.004.2 39.3030.14 30.30 1.0240.165 1.71.186 1.193PGADCUVONRBP003I3/4

EBUR52

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without expresswritten approval of SGS-THOMSON Microelectonics.© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . .4/4