Semiconductor devices having through electrodes

专利名称：Semiconductor devices having through

electrodes

发明人：Kwangjin Moon,SuKyoung Kim,Kunsang

Park,Byung Lyul Park,Sukchul Bang,Jin HoAn,Kyu-Ha Lee,Dosun Lee,Gilheyun Choi

申请号：US13756833申请日：20130201公开号：US08872351B2公开日：20141028

专利附图：

摘要：Provided are semiconductor devices with a through electrode and methods of

fabricating the same. The methods may include forming a via hole at least partiallypenetrating a substrate, the via hole having an entrance provided on a top surface of thesubstrate, forming a via-insulating layer to cover conformally an inner surface of the viahole, forming a buffer layer on the via-insulating layer to cover conformally the via holeprovided with the via-insulating layer, the buffer layer being formed of a material whoseshrinkability is superior to the via-insulating layer, forming a through electrode to fill thevia hole provided with the buffer layer, and recessing a bottom surface of the substrateto expose the through electrode.

申请人：Samsung Electronics Co., Ltd.

地址：Gyeonggi-do KR

国籍：KR

代理机构：Myers Bigel Sibley & Sajovec, P.A.

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