专利名称：PASSIVATION OF GAN BASED FETS发明人：SHEALY, JAMES, R.,GREEN, BRUCE,
M.,EASTMAN, LESTER, F.
申请号：EP00957262申请日：20000816公开号：EP1208607A4公开日：20021023
摘要：Surface passivation of GaN based FETs, including undoped AlGaN/GaN HEMTsand MISFETs, and doped GaN MESFETs, reduces or eliminates the surface effectsresponsible for limiting both the RF current and breakdown voltages of the devices.Passivation is provided through deposition of a layer (32) made of a dielectric, such assilicon nitride, silicon dioxide or polyimide, on a barrier layer (16) between a source (24)and a drain (25) of the FET (10).
申请人：CORNELL RESEARCH FOUNDATION, INC.
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