Polysilicon fuse, manufacturing method thereof, an

专利名称：Polysilicon fuse, manufacturing method

thereof, and semiconductor device includingpolysilicon fuse

发明人：Hideaki Katakura申请号：US14278077申请日：20140515公开号：US09412694B2公开日：20160809

专利附图：

摘要：A polysilicon fuse is disclosed that is capable of securing good insulation afterbeing cut into small areas. A manufacturing method for the fuse and a small-size and

highly-reliable semiconductor device including a polysilicon fuse also are disclosed. Byforming a cavity inside a polysilicon portion serving as a melting portion by setting themelting portion of the polysilicon fuse to be a vertical type, a gap is formed between anupper part electrode and the surface of melted polysilicon when the polysilicon fuse iscut off. Because of this gap, good insulation can be secured. By using this polysilicon fuse,a semiconductor device that has a small size and high reliability is provided.

申请人：FUJI ELECTRIC CO., LTD.

地址：Kawasaki-shi JP

国籍：JP

代理机构：Rossi, Kimms & McDowell LLP

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