SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING

专利名称：SILICON CARBIDE EPITAXIAL WAFER AND

MANUFACTURING METHOD THEREFOR

发明人：Kenji Momose,Yutaka Tajima,Yasuyuki

Sakaguchi,Michiya Odawara,YoshihikoMiyasaka

申请号：US13392348申请日：20100825

公开号：US20120146056A1公开日：20120614

专利附图：

摘要：Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of

step bunching. Also provided is a method for manufacturing said silicon carbide epitaxialwafer. The provided method for manufacturing a silicon carbide semiconductor deviceincludes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5°or less is polished until the lattice disorder layer on the surface of the substrate is 3 nmor less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to atemperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; astep wherein silicon carbide is epitaxially grown on the surface of the cleaned substrateas the amounts of SiHgas and CHgas considered necessary for epitaxially growing siliconcarbide are supplied simultaneously at a carbon-to-silicon concentration ratio between0.7 and 1.2 to 1; and a step wherein the supply of SiHgas and the supply of CHgas are cutoff simultaneously, the substrate temperature is maintained until the SiHgas and theCHgas are evacuated, and then the temperature is decreased.

申请人：Kenji Momose,Yutaka Tajima,Yasuyuki Sakaguchi,Michiya Odawara,YoshihikoMiyasaka

地址：Chichibu-shi JP,Chichibu-shi JP,Chichibu-shi JP,Chichibu-shi JP,Sanmu-shi JP

国籍：JP,JP,JP,JP,JP

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