Nitride semiconductor laser device

专利名称：Nitride semiconductor laser device发明人：Tokuya Kozaki,Masahiko Sano,Shuji

Nakamura,Shinichi Nagahama

申请号：US10700270申请日：20031104公开号：US07015053B2公开日：20060321

专利附图：

摘要：A nitride semiconductor laser device has an improved stability of the lateralmode under high output power and a longer lifetime, so that the device can be appliedto write and read light sources for recording media with high capacity. The nitride

semiconductor laser device includes an active layer, a p-side cladding layer, and a p-sidecontact layer laminated in turn. The device further includes a waveguide region of a stripestructure formed by etching from the p-side contact layer. The stripe width provided byetching is within the stripe range of 1 to 3 μm and the etching depth is below thethickness of the p-side cladding layer of 0.1 μm and above the active layer. Particularly,when a p-side optical waveguide layer includes a projection part of the stripe structureand a p-type nitride semiconductor layer on the projection part and the projection partof the p-side optical waveguide layer has a thickness of not more than 1 μm, an aspectratio is improved in far field image. Moreover, the thickness of the p-side opticalwaveguide layer is greater than that of an n-side optical waveguide layer.

申请人：Tokuya Kozaki,Masahiko Sano,Shuji Nakamura,Shinichi Nagahama

地址：Anan JP,Anan JP,Anan JP,Anan JP

国籍：JP,JP,JP,JP

代理机构：Nixon & Vanderhye P.C.

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