Device for developing treatment of semiconductor m

专利名称：Device for developing treatment of

semiconductor materials

发明人：Seiichiro Aigo申请号：US07/051335申请日：19870519公开号：US04791880A公开日：19881220

摘要：A device for developing treatment of a semiconductor material which is

provided with a cup-shaped basin having a liquid inlet passage in its center portion and anannular flat upper portion and a chuck positioned above the basin and having a lower endsurface for supporting the semiconductor material to be developed, the basin beingprovided on its upper portion with a ring for temporarily storing the developing liquidsupplied to the upper portion of the basin, the ring having a diameter larger than the sizeof the semiconductor material and the passage being provided with an automaticallyoperable valve.

申请人：AIGO; SEIICHIRO

代理机构：Wegner & Bretschneider

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