Methods of making vertical microelectronic field e

专利名称：Methods of making vertical microelectronic

field emission devices

发明人：Gary Wayne Jones,Ching-Tzong Sune申请号：US08/527520申请日：19950913公开号：US057785A公开日：19970715

摘要：A vertical microelectronic field emitter is formed by first forming tips on theface of a substrate and then forming trenches in the substrate around the tips to formcolumns in the substrate, with the tips lying on top of the columns. The trenches arefilled with a dielectric and a conductor layer is formed on the dielectric. Alternatively,trenches may be formed in the face of the substrate with the trenches defining columnsin the substrate. Then, tips are formed on top of the columns. The trenches are filled withdielectric and the conductor layer is formed on the dielectric to form the extractionelectrodes.

申请人：MCNC

代理机构：Bell, Seltzer, Park & Gibson

更多信息请下载全文后查看