KTK596S资料

SEMICONDUCTORTECHNICAL DATACONDENSER MICROPHONE APPLICATION.FEATURES

Expecially Suited for Use in Audio, Telephone.Capacitor Microphones.Excellent Voltage Characteristics.

AGLKTK596SN CHANNEL JUNCTION FIELDEFFECT TRANSISTOREBLExcellent Transient Characteristics.

231MAXIMUM RATING (Ta=25CHARACTERISTICGate-Drain Voltage Gate Current Drain CurrentDrain Power DissipationJunction TemperatureStorage Temperature Range)SYMBOLVGDOIGIDPDTjTstgRATING-20101150150-55150UNITVmAmAmWCNPPDIMABCDEGHJKLMNPMILLIMETERS_+2.93 0.201.30+0.20/-0.151.30 MAX0.45+0.15/-0.052.40+0.30/-0.201.900.950.13+0.10/-0.050.00 ~ 0.100.550.20 MIN1.00+0.20/-0.107HM1. SOURCE2. DRAIN3. GATEKSOT-23Marking

I RankDSSType NameLot No.F ELECTRICAL CHARACTERISTICS (Ta=25CHARACTERISTICGate-Drain Breakdown VoltageGate-Source Cut-off VoltageDrain CurrentFoward Transfer AdmittanceInput CapacitanceReverse Transfer Capacitance)TEST CONDITIONIG=-100AVDS=5V, ID=1AVDS=5V, VGS=0VDS=5V, VGS=0, f=1kHzVDS=5V, VGS=0, f=1MHzVDS=5V, VGS=0, f=1MHzMIN.-20-1500.4--TYP.--0.6-1.23.50.65MAX.--1.5320---UNITVVAmSpFpFSYMBOLV(BR)GDOVGS(OFF)IDSS (Note)| yfs |CissCrssNote : IDSS Classification Y(1) : 150~240, GR(2) : 210~3202002. 9. 17Revision No : 3JD1/5元器件交易网www.cecb2b.com

KTK596S

ELECTRICAL CHARACTERISTICS

(Ta=25, VCC=4.5V, RL=1k, Cin=15pF, See Specified Test Circuit.)

CHARACTERISTICVoltage GainReduced Voltage CharacteristicFrequency CharacteristicInput ResistanceOutput ResistanceTotal Harmonic DistortionOutput Noise Voltage SYMBOLGVGVVGVFZinZOTHDVNOTEST CONDITIONVin=10mV, f=1kHzVin=10mV, f=1kHz VCC=4.5V1.5Vf=1kHz110Hzf=1kHzf=1kHzVin=30mV, f=1kHzVin=0, A curveMIN.---25 ---TYP.-3.0-1.2---1.0 --110MAX.--4.0-1.0-700%dBUNITdBdBdBMSPECIFIED TEST CIRCUIT

Voltage gain.

Frequency Characteristic.Distortion.

Reduced Voltage Characteristic.

1kΩ33uF15pFV =4.5VCCV =1.5VCCABVTVMOSCVTHD1kΩFor OutputImpedance2002. 9. 17Revision No : 32/5元器件交易网www.cecb2b.com

KTK596S

I - VDDS

300

I =200µADSSI - V DGS

350V =5VDSV =0GSDRAIN CURRENT I (µA)D250200150100500012345678910DRAIN-SOURCE VOLTAGE V (V)DSV =-0.4VGSV =-0.1VGSV =-0.2VGSV =-0.3VGSDRAIN CURRENT I (µA)D300250200150100500-0.7-0.6-0.5-0.4-0.3-0.2-0.10GATE-SOURCE VOLTAGE V (V)GS S S DI0=30µA S SI D7=1A0µy - IDSSfsFORWARD TRANSFER ADMITTANCEyf (mS)sCURRENT VOLTAGE VG S( of f ) (V)3

V =5VDSV =0VGSf=1kHzV - IGS(off)DSS-1V =5VDSI =1DµA-0.5-0.31

0.50.3100200300400500DRAIN CURRENT I (DSSµA)-0.1100200300400500DRAIN CURRENT I (DSSµA)10

INPUT CAPACITANCE C i s s (pF)V =0GSf=1MHzREVERSE TRANSFER CAPACITANCE C r s s (pF)C - VissDSC - VrssDS3V =0GSf=1MHz53

10.50.31

3

5

10

20

DRAIN-SOURCE VOLTAGE V (V)DS

11

3

5

10

20

DRAIN-SOURCE VOLTAGE V (V)DS

2002. 9. 17Revision No : 33/5元器件交易网www.cecb2b.com

KTK596S

G - IVDSS2

G : V =4.5VVCCG - IVVDSSREDUCED VOLTAGE CHARACTERISICG V (dB)V2VOLTAGE GAIN G V (dB)0-2-4-6-8-10100V =10mVinR =1.0kΩLf=1kHzI : V =5.0VDSSDS0-2G : V =4.5V 1.5V VVCCV =10mVinf=1kHzI : V =5.0VDSSDS-4-6100200300400500DRAIN CURRENT I (DSSµA)200300400500DRAIN CURRENT I (DSSµA)TOTAL HARMONIC DISTORTION THD (%)THD - IDSS5

INPUT RESISTANCE Z I N (MΩ)THD : V =4.5VCCZ - IINDSS36Z : V =4.5VINCCV =10mVinf=1kHzI : V =5.0VDSSDS3

V =30mVinf=1kHzI : V =5.0VDSSDS343230282610.50.3100200300400500DRAIN CURRENT I (DSSµA)100200300400500DRAIN CURRENT I (DSSµA)Z - IODSSZ : V =4.5VOCCV - INODSSOUTPUT NOISE VOLTAGE V O (dB)N-112V : V =4.5V NOCCV =0, A curveinR =1.0kΩLI : V =5.0VDSSDS700OUTPUT RESISTANCE Z (Ω)OV =10mVinf=1kHzI : V =5.0VDSSDS600-114500-116400-118300100

200300400500

-120100

200300400500

DRAIN CURRENT I (DSSµA)DRAIN CURRENT I (DSSµA)

2002. 9. 17Revision No : 34/5元器件交易网www.cecb2b.com

KTK596S

TOTAL HARMONIC DISTORTION THD (%)THD - VIN

30

DRAIN POWER DISSIPATION P (mW)DTHD : V =4.5VCC

f=1kHzI : V =5.0VDSSDS

P - TaD

200

1053

I D =1 S SA70µ0 = 3 S SI D0µA150

100

50

10.5

0

40

80

120

160

200

INPUT VOLTAGE V (mV)IN

00

25

50

75

100

125

150

175

AMBIENT TEMPERATURE Ta ( C)2002. 9. 17Revision No : 35/5