POWER MOSFET AND METHOD OF MAKING THE SAME

专利名称：POWER MOSFET AND METHOD OF MAKING

THE SAME

发明人：HSHIEH, FWU-IUAN,SO, KOON,

CHONG,TSUI, YAN, MAN

申请号：US0119377申请日：20010615公开号：WO0199198A3公开日：20021010

摘要：The breakdown voltage of the oxide layer is increased in a power MOSFET (1)having at least a first trench (11) disposed in the active region (12) of the MOSFET and asecond trench (11) disposed in the termination region (12) of the MOSFET. In accordancewith the invention, mask techniques are used to thicken the oxide layer (13) in the vicinityof the top corner of the second trench, thereby compensating for the thinning of thisregion (and the accompanying reduction in breakdown voltage) that occurs due to thetwo-dimensional oxidation during the manufacturing process.

申请人：GENERAL SEMICONDUCTOR, INC.

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