Low power voltage sensing circuit

专利名称：Low power voltage sensing circuit发明人：Ching S. Jenq申请号：US07/677297申请日：19910329公开号：US05181187A公开日：19930119

摘要：A voltage sensing circuit receives an input voltage signal and generates anoutput voltage signal. The circuit has a sensing node. A first P-type MOS transistor isconnected having one of its ends to receive the input voltage signal with the other endconnected to the sensing node to provide a sensing signal. A first voltage source isconnected to the gate of the first P-type transistor. A voltage dropping circuit receivesthe input voltage signal and generates a first drop voltage signal lower than the inputvoltage signal. A second P-type MOS transistor has one end connected to receive thefirst drop voltage signal. The first voltage source is also connected to the gate of thesecond P- type MOS transistor. A third N-type MOS transistor has a gate connected tothe other end of the second P-type MOS transistor. The third N-type MOS transistor hasone of its ends connected to the sensing node. A second voltage source is connected tothe other end of the third N-type MOS transistor. A driving circuit comprising of aninverter is connected to the sensing node for receiving the sensing signal and forproducing the output voltage signal in response thereto.

申请人：SILICON STORAGE TECHNOLOGY, INC.

代理机构：Limbach & Limbach

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