CNY17-2

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features

• • • • •

Isolation Test Voltage 5300 VRMSLong Term Stability

Industry Standard Dual-in-Line Packagee3Lead-free component

Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

ACNC1236B5C4EAgency Approvals

•Underwriters Lab File #E52744 System Code H or J

•DIN EN 60747-5-2 (VDE0884)DIN EN 60747-5-5 pending •BSI IEC60950 IEC60065 •FIMKO

i179004Order Information

Part

CNY17-1CNY17-2CNY17-3CNY17-4CNY17-1X006CNY17-1X007CNY17-1X009CNY17-2X006CNY17-2X007CNY17-2X009CNY17-3X006CNY17-3X007CNY17-3X009CNY17-4X006CNY17-4X007CNY17-4X009

Remarks

CTR 40 - 80 %, DIP-6CTR 63 - 125 %, DIP-6CTR 100 - 200 %, DIP-6CTR 160 - 320 %, DIP-6

CTR 40 - 80 %, DIP-6 400 mil (option 6)CTR 40 - 80 %, SMD-6 (option 7)CTR 40 - 80 %, SMD-6 (option 9)CTR 63 - 125 %, DIP-6 400 mil (option 6)CTR 63 - 125 %, SMD-6 (option 7)CTR 63 - 125 %, SMD-6 (option 9)CTR 100 - 200 %, DIP-6 400 mil (option 6)CTR 100 - 200 %, SMD-6 (option 7)CTR 100 - 200 %, SMD-6 (option 9)CTR 160 - 320 %, DIP-6 400 mil (option 6)CTR 160 - 320 %, SMD-6 (option 7)CTR 160 - 320 %, SMD-6 (option 9)

Description

The CNY17 is an optically coupled pair consisting ofa Gallium Arsenide infrared emitting diode opticallycoupled to a silicon NPN phototransistor.

Signal information, including a DC level, can be trans-mitted by the device while maintaining a high degreeof electrical isolation between input and output.

The CNY17 can be used to replace relays and trans-formers in many digital interface applications, as wellas analog applications such as CRT modulation.

For additional information on the available options refer to Option Information.

Document Number 83606Rev. 1.5, 26-Oct-04

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CNY17

Vishay SemiconductorsAbsolute Maximum Ratings

Tamb = 25°C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device isnot implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absoluteMaximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter

Reverse voltageForward currentSurge currentPower dissipation

t ≤ 10 µs

Test condition

SymbolVRIFIFSMPdiss

Value6.0602.5100

UnitVmAAmW

Output

Parameter

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector current

t < 1.0 ms

Power dissipation

Test condition

SymbolBVCEOBVEBOICICPdiss

Value707.050100150

UnitVVmAmAmW

Coupler

Parameter

Isolation test voltage (between emitter & detector referred to climate DIN 50014, part 2, Nov. 74)Creepage distanceClearance distanceIsolation thickness between emitter and detector

Comparative tracking index per DIN IEC 112/VDE0303, part 1Isolation resistanceStorage temperatureOperating temperatureSoldering temperature

max. 10 s, dip soldering: distance to seating plane ≥ 1.5 mm

VIO = 500 V, Tamb = 25°CVIO = 500 V, Tamb = 100°C

RIORIOTstgTambTsld

t = 1 sec

Test condition

SymbolVISO

Value5300

UnitVRMS

≥ 7.0≥ 7.0≥ 0.4175≥ 1012≥1 011- 55 to + 150- 55 to + 100

260

mmmmmm

ΩΩ°C°C°C

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Document Number 83606

Rev. 1.5, 26-Oct-04

CNY17

Vishay Semiconductors

Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineeringevaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Forward voltageBreakdown voltageReserve currentCapacitanceThermal resistance

Test condition

IF = 60 mAIR = 10 mAVR = 6.0 V

VR = 0 V, f = 1.0 MHz

SymbolVFVBRIRCORth

6.0

0.0125750

10

Min

Typ.1.25

Max1.65

UnitVVµApFK/W

Output

Parameter

Collector-emitter capacitanceCollector - base capacitanceEmitter - base capacitanceThermal resistance

Test condition

VCE = 5.0 V, f = 1.0 MHzVCB = 5.0 V, f = 1.0 MHzVEB = 5.0 V, f = 1.0 MHz

SymbolCCECCBCEBRth

Min

Typ.5.26.57.5500

Max

UnitpFpFpFK/W

Coupler

Parameter

Collector-emitter saturation voltage

Coupling capacitanceCollector-emitter leakage current

VCE = 10 V, ICEO

CNY17-1CNY17-2CNY17-3CNY17-4

Test condition

VF = 10 mA, IC = 2.5 mA

Part

SymbolVCEsatCCICEOICEOICEOICEO

Min

Typ.0.250.62.02.05.05.0

5050100100Max0.4

UnitVpFnAnAnAnA

Current Transfer Ratio

Current Transfer Ratio and collector-emitter leakage current by dash number (Tamb°C)

Parameter

IC/IF

Test condition

IF = 10 mA, VCE = 5.0 V

PartCNY17-1CNY17-2CNY17-3CNY17-4

IF = 1.0 mA, VCE = 5.0 V

CNY17-1CNY17-2CNY17-3CNY17-4

SymbolCTRCTRCTRCTRCTRCTRCTRCTR

Min406310016013223456

30457090Typ.

Max80125200320

Unit%%%%%%%%

Document Number 83606Rev. 1.5, 26-Oct-04

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CNY17

Vishay SemiconductorsSwitching Characteristics

Linear operation (without saturation)

ParameterTurn-on timeRise timeTurn-off timeFall timeCut-off frequency

Parameter

Turn-on time

Test condition

IF = 10 mA, VCC = 5.0 V, RL = 75 WIF = 10 mA, VCC = 5.0 V, RL = 75 WIF = 10 mA, VCC = 5.0 V, RL = 75 WIF = 10 mA, VCC = 5.0 V, RL = 75 WIF = 10 mA, VCC = 5.0 V,

Test condition

IF = 20 mAIF = 10 mAIF = 5.0 mA

Rise time

IF = 20 mAIF = 10 mAIF = 5.0 mA

Turn-off time

IF = 20 mAIF = 10 mAIF = 5.0 mA

Fall time

IF = 20 mAIF = 10 mAIF = 5.0 mA

SymboltontrtofftffCOPartCNY17-1CNY17-2CNY17-3CNY17-4CNY17-1CNY17-2CNY17-3CNY17-4CNY17-1CNY17-2CNY17-3CNY17-4CNY17-1CNY17-2CNY17-3CNY17-4

SymboltontontontontftftftftofftofftofftofftftftftfMin

Typ.3.02.02.32.0250Min

Typ.3.04.24.26.02.03.03.04.61823232511141415

MaxMax

UnitµsµsµsµskHzUnitµsµsµsµsµsµsµsµsµsµsµsµsµsµsµsµs

Switching operation (with saturation)

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

IFRL= 75ΩICVCC= 5VIF1KΩVCC= 5V47Ω47Ωicny17_01icny17_02Figure1. Linear Operation ( without Saturation)Figure2. Switching Operation (with Saturation)

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Document Number 83606

Rev. 1.5, 26-Oct-04

CNY17

Vishay Semiconductors

(TA=–25°C,VCE=5.0V)IC/IF=f(IF)(TA=50°C,VCE=5.0V)IC/IF=f(IF)12341234icny17_06icny17_03Figure3. Current Transfer Ratio vs. Diode CurrentFigure6. Current Transfer Ratio vs. Diode Current

(TA=0 °C,VCE=5.0V)IC/IF=f(IF)(TA=75°C,VCE=5.0V)1231234icny17_04icny17_07Figure4. Current Transfer Ratio vs. Diode CurrentFigure7. Current Transfer Ratio vs. Diode Current

(TA=25°C,VCE=5.0V)IC/IF=f(IF)(IF=10mA,VCE=5.0V)IC/IF=f(T)43123421icny17_05icny17_08TAFigure5. Current Transfer Ratio vs. Diode CurrentFigure8. Current Transfer Ratio (CTR) vs. Temperature

Document Number 83606Rev. 1.5, 26-Oct-04

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CNY17

Vishay Semiconductors

IC=f(VCE)(IF=0)ICEO=f(V,T)(IF=0)icny17_09icny17_12Figure9. Transistor CharacteristicsFigure12. Collector-Emitter off-state Current

VCEsat=f(IC)IC=f(VCE)icny17_10icny17_13Figure10. Output Characteristics

Figure13. Saturation Voltage vs Collector Current and Modulation

Depth CNY17-1

VF=f(IF)VCEsat=f(IC)icny17_11icny17_14Figure11. Forward Voltage

Figure14. Saturation Voltage vs. Collector Current and Modulation

Depth CNY17-2

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Document Number 83606

Rev. 1.5, 26-Oct-04

CNY17

Vishay Semiconductors

VCEsat=f(IC)icny17_15Figure15. Saturation Voltage vs. Collector Current and Modulation

Depth CNY17-3

VVCEsat=f(IC)icny17_16Figure16. Saturation Voltage vs. Collector Current and Modulation

Depth CNY17-4

Ptot=f(TA)icny17_18Figure17. Permissible Power Dissipation for Transistor and Diode

Document Number 83606Rev. 1.5, 26-Oct-04

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CNY17

Vishay Semiconductors

Package Dimensions in Inches (mm)

21pinoneID3.248(6.30).256(6.50)456ISOMethodA.335(8.50).343(8.70).039(1.00)Min.4°typ..018(0.45).022(0.55)i178004.048(0.45).022(0.55).130(3.30).150(3.81).300(7.62)typ.18°.031(0.80)min..031(0.80).035(0.90).100(2.)typ.3°–9°.010(.25)typ..300–.347(7.62–8.81).114(2.90).130(3.0)Option60.407(10.36)0.391(9.96)0.307(7.8)0.291(7.4)0.028(0.7)MIN.Option70.300(7.62)TYP.Option90.375(9.53)0.395(10.03)0.300(7.62)ref.0.180(4.6)0.160(4.1)0.0040(0.102)0.315(8.0)MIN.0.014(0.35)0.010(0.25)0.400(10.16)0.430(10.92)0.331(8.4)MIN.0.406(10.3)MAX.0.0098(0.249)0.020(0.51)0.040(1.02)0.012(0.30)typ.0.315(8.00)min.15°max.18450www.vishay.com8

Document Number 83606

Rev. 1.5, 26-Oct-04

CNY17

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1.Meet all present and future national and international statutory requirements.

2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/0/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 83606Rev. 1.5, 26-Oct-04

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Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, byestoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay'sterms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any expressor implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitnessfor a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.Customers using or selling these products for use in such applications do so at their own risk and agree to fullyindemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000Revision: 08-Apr-05

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