BAS70-02V资料
BAS70-02V
Vishay Semiconductors
Small Signal Schottky Diodes, Single
Features
•These diodes feature very low turn-on voltage and fast switching.
•These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. •Space saving SOD-523 package •Lead (Pb)-free component •Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
e3112218554Mechanical Data
Case: SOD-523 Plastic case
Molding Compound Flammability Rating: UL 94 V-0
Terminals: High temperature soldering guaranteed: 260°C/10 sec. at terminalsWeight: approx. 1.6 mg
Packaging Codes/Options:
GS18 / 10 k per 13\" reel (8 mm tape), 10 k/boxGS08 / 3 k per 7\" reel (8 mm tape), 15 k/box
Parts Table
Part
BAS70-02V
Ordering code
BAS70-02V-GS18 or BAS70-02V-GS08
X
Marking
Remarks
Tape and Reel
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Repetitive peak reverse voltageForward continuous currentSurge forward currentPower dissipation
Tamb = 25°Ctp < 1 s, Tamb = 25°CTamb = 25°C
Test condition
SymbolVRRMIFIFSMPtot
Value70200600200
UnitVmAmAmW
Thermal Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Junction soldering pointJunction temperatureStorage temperature range
Test condition
SymbolRthJSTjTS
Value100125- 55 to +125
UnitK/W°C°C
Document Number 85652Rev. 1.3, 29-Jun-05
www.vishay.com
1
元器件交易网www.cecb2b.com
BAS70-02V
Vishay SemiconductorsElectrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Reverse breakdown voltageLeakage currentForward voltageDiode capacitanceReverse recovery time
Test condition
IR = 10 µA (pulsed)VR = 50 V, tp < 300 µstp < 300 µs, IF = 1.0 mAtp < 300 µs, IF = 15 mAVR = 0 V, f = 1 MHzIF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ω
SymbolV(BR)RIRVFVFCtottrr
1.5
Min70
20
100410100025
Typ.
Max
UnitVnAmVmVpFns
Package Dimensions in mm (Inches)
0.15(0.006)ISOMethodE0.22(0.008)0.16(0.006)1.6(0.062)0.8(0.031)MountingPadLayout1.35(0.053)0.3(0.012)0.15AA1.2(0.047)0.39(0.015)0.35(0.014)16864www.vishay.com2
0.6(0.023)Document Number 85652
Rev. 1.3, 29-Jun-05
元器件交易网www.cecb2b.com
BAS70-02V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85652Rev. 1.3, 29-Jun-05
www.vishay.com
3
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