专利名称:Semiconductor devices, DC/DC converter
and power supply
发明人:Masaki Shiraishi,Takayuki Iwasaki,Nobuyoshi
Matsuura
申请号:US11175288申请日:20050707
公开号:US200600032A1公开日:20060112
专利附图:
摘要:A semiconductor device in which the self-turn-on phenomenon is prevented thatcan significantly improve power conversion efficiency. The semiconductor device is a
system-in-package for power supply applications in which a high-side switch, a low-sideswitch, and two drivers are included in a single package. The device includes an auxiliaryswitch disposed between the gate and source of said low-side switch, and a low-sideMOSFET for the low-side switch and an auxiliary MOSFET for the auxiliary switch aredisposed on the same chip. In this way, the self-turn-on phenomenon can be prevented,allowing the mounting of a low-side MOSFET with a low threshold voltage and therebysignificantly improving power conversion efficiency. The gate of the auxiliary MOSFET isdriven by the driver for the high-side MOSFET thereby eliminating the need for a newdrive circuit and realizing the same pin configuration as existing products, which facilitateseasy replacement.
申请人:Masaki Shiraishi,Takayuki Iwasaki,Nobuyoshi Matsuura
地址:Hitachi JP,Hitachi JP,Takasaki JP
国籍:JP,JP,JP
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