Surface acoustic wave resonator, surface acoustic

专利名称：Surface acoustic wave resonator, surface

acoustic wave resonator unit, surfacemounting type surface acoustic waveresonator unit

发明人：Hiroyuki Ogiso,Shuuichi Iguchi,Fumitaka

Kitamura

申请号：US08/537923申请日：19960118公开号：US05867074A公开日：19990202

摘要：A surface acoustic wave resonator unit using surface acoustic wave, in which asurface acoustic wave resonator formed by disposing an IDT and reflectors on apiezoelectric member thereof is mounted by a cantilever method so that a surfaceacoustic wave resonator unit exhibiting very stable resonance frequency, a low resonanceresistance and a large Q- value is realized. By accommodating the surface acoustic waveresonator in a housing in a vacuum state, the Q-value can be enlarged. By anodic-oxidizing the electrodes forming the IDT, a thick oxide film can be formed, the oxide filmenabling the electrodes to be protected from problems, such as short circuit taking dueto foreign matters, such as dust, with the characteristics maintained. If the high

performance surface acoustic wave resonator unit is molded together with a lead frameby resin, a surface acoustic wave device, that can be mounted on the surface, and thatexhibits excellent reliability and high quality, can be provided.

申请人：SEIKO EPSON CORPORATION

代理机构：Oliff & Berridge

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