CMOS INTEGRATED CIRCUIT AND AMPLIFYING CIRCUIT

专利名称：CMOS INTEGRATED CIRCUIT AND

AMPLIFYING CIRCUIT

发明人：Tadamasa MURAKAMI申请号：US13612118申请日：20120912

公开号：US20130127538A1公开日：20130523

专利附图：

摘要：There is provided a CMOS integrated circuit suppressing gate resistance andpreventing increase in noise figure (NF), while an input transistor has a comb structure.The transistor includes: a gate electrode extended from a gate wiring to form a comb

shape and receiving an input signal from an input terminal; a source electrode extendedfrom a source wiring facing the gate wiring to form a comb shape and connected to aground terminal, comb teeth thereof being interposed in every other space betweencomb teeth of the gate electrode; a drain electrode extended from a drain wiring facingthe gate wiring to form a comb shape, comb teeth thereof being interposed in everyother space between comb teeth of the gate electrode where the comb teeth of thesource electrode are absent, wherein an overlapping region between the gate electrodeand the source electrode or the drain electrode is absent.

申请人：Tadamasa MURAKAMI

地址：Yokohama JP

国籍：JP

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