Write Buffer for Improved DRAM Write Access Patter

专利名称：Write Buffer for Improved DRAM Write

Access Patterns

发明人：Cagri Balkesen,Markus Buehler,Rainer

Dorsch,Guenther Hutzl,Michael W.Kaufmann,Daniel Pfefferkorn,DavidRohr,Stefanie Scherzinger,Thomas Schwarz

申请号：US12962774申请日：20101208

公开号：US20110302367A1公开日：20111208

专利附图：

摘要：The present invention relates to a method and respective system for operatinga DRAM main memory. One buffer line is provided for multiple pages. When writing datato the buffer it is decided which to which buffer-line the data is written to based on itsdestination main memory address. A tuple consisting of lower memory address and datais stored. Data entered into the buffer-line will be sorted by page in case the line isflushed to the main memory. Sorting the buffer entries results in less page openings andclosings, since the data is re-arranged by memory address and therefore in logical order.By using one line for multiple pages only a fraction of memory of a common set-associative cache is needed, thus decreasing the amount of overhead significantly.

申请人：Cagri Balkesen,Markus Buehler,Rainer Dorsch,Guenther Hutzl,Michael W.Kaufmann,Daniel Pfefferkorn,David Rohr,Stefanie Scherzinger,Thomas Schwarz

地址：Zurich CH,Weil im Schoenbuch DE,Herrenberg DE,Sindelfingen DE,StuttgartDE,Rostock DE,Mannheim DE,Boeblingen DE,Stuttgart DE

国籍：CH,DE,DE,DE,DE,DE,DE,DE,DE

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