GP1S094HCZ0F;中文规格书,Datasheet资料

GP1S094HCZ0F

Gap : 3mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter ■Description

GP1S094HCZ0F is a compact-package, photo-transistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-contact sensing. The compact package series is a result of unique technology combing transfer and injection molding.

This device has a wide gap and positioning pins.

■Agency approvals/Compliance

1. Compliant with RoHS directive

■Applications

1. Detection of object presence or motion. 2. Example: printer, lens control for camera

■Features

1. Transmissive with phototransistor output2. Highlights:

• Compact Size

• Positioning Pin to prevent misalignment3. Key Parameters: • Gap Width : 3mm

• Slit Width (detector side): 0.3mm • Package : 5.5×2.6×4.8mm

4. Lead free and RoHS directive compliant

Notice The content of data sheet is subject to change without prior notice.

In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.

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Sheet No.: D3-A00601EN

Date Oct. 3. 2005© SHARP Corporation

GP1S094HCZ0F

■Internal Connection Diagram

Top view

21123434AnodeCollectorEmitterCathode

■Outline Dimensions

Top viewa'(Unit : mm)

a(C0.3)5.53(0.75)a-a' section(C0.4)Center of light axis2.6(0.3)Slit width3∗∗0.8∗∗(C0.3)C0.20.20.15+−0.14.80.33.1+−0.23±0.20.40.5(0.05)∗∗∗∗4.55∗20.75±0.05+0 φ1−0.13421• Unspecifi ed tolerance : ±0.2mm• Dimensions in parenthesis are shown for reference.• The dimensions indicated by ∗ refer to those measured from the lead base.• The dimensions shown do not include burr.Burr's dimension shall be : 0.15mm MAX.• ∗∗ The lead may be exposed at the shaded portion.• ∗∗∗ This portion has no SnCu plating.Product mass : approx. 0.085gPlating material : SnCu (Cu : TYP. 2%)

Country of origin

Japan

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GP1S094HCZ0F

■Absolute Maximum Ratings

ParameterForward current

InputReverse voltage

Power dissipation

Collector-emitter voltageEmitter-collector voltageOutput

Collector current

Collector power dissipationTotal power dissipationOperating temperatureStorage temperature∗1

Soldering temperature

∗

(Ta=25˚C )

SymbolRatingUnitIF50mAVR6VP75mWVCEO35VVECO6V

20mAIC

75mWPC

100mWPtot

˚CTopr−25 to +85

˚CTstg−40 to +100

Tsol260˚C

1mm or moreSoldering area1 For 5s or less

■Electro-optical Characteristics

Parameter

Forward voltage

Input

Reverse current

OutputCollector dark current

Collector current

TransferCollector-emitter saturation voltagecharac-Rise time

teristicsResponse time

Fall time

SymbolVFIRICEOICVCE(sat)

trtf

ConditionIF=20mAVR=3VVCE=20VVCE=5V, IF=5mAIF=10mA, IC=40μAVCE=5V, IC=100μA, RL=1kΩ

MIN.−−−40−−−

TYP.1.2−−−−5050

(Ta=25˚C )MAX.Unit1.4V10μA100nA400μA0.4V150μs150μs

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GP1S094HCZ0F

Fig.1 Forward Current vs. Ambient Temperature

6050Forward current IF (mA)403020100

󰀍25

Fig.2 Power Dissipation vs. Ambient Temperature

12010080

75604020150−25

0

25

50

7585

100

Ptot

Power dissipation P, Pc, Ptot (mW)P, Pc

025507585100

Ambient temperature Ta (˚C)

Ambient temperature Ta (˚C)

Fig.3 Forward Current vs. Forward Voltage

Fig.4 Collector Current vs. Forward Current1

VCE=5VTa =25˚CTa󰀝75˚C50˚CForward current IF (mA)100

25˚C0˚C󰀍25˚CCollector current Ic (mA)0.8

0.60.4

10

0.2

100.511.522.53Forward voltage VF (V)

0

010Forward current IF (mA)

20Fig.5 Collector Current vs. Collector-emitter Voltage

1

IF=50mAFig.6 Relative Collector Current vs.

Ambient Temperature

120110100Relative collector current (%)908070605040302010

0󰀍25IF󰀝5mAVCE󰀝5VCollector current IC (mA)0.8

40mA30mA20mA0.6

0.4

0.2

10mA5mA0

0246810025507585Collector-emitter voltage VCE (V)

Ambient temperature Ta (˚C)

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GP1S094HCZ0F

Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature

0.2Collector-emitter saturation voltage VCE(sat) (V)0.180.160.140.120.10.080.06−25025507585IF=10mAIC=40μAFig.8 Collector Dark Current vs. Ambient Temperature

10󰀍6

VCE󰀝20V

Collector Dark current ICEO (A)10󰀍7

10󰀍8

10󰀍9

10󰀍10

0

255075100

Ambient temperature Ta (˚C)

Ambient temperature Ta (˚C)

Fig.9 Response Time vs. Load Resistance1 000

VCE󰀝5VIC󰀝100MAFig.10 Test Circuit for Response TimeVCCRDResponse time (Ms)100

tftrtd10

tsInputRLOutputInputOutputtdtrtstf10%90%10.1110100Load resistance RL (k7)

Fig.11 Detecting Position Characteristics (1)1009080Relative collector current (%)70605040302010000.511.522.5IF=5mAVCE=5VL=0LFig.12 Detecting Position Characteristics (2)1009080Relative collector current (%)70605040302010000.511.52IF=5mAVCE=5VLL=0Shield moving distance L (mm)

Sheet No.: D3-A00601EN

Shield moving distance L (mm)

Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.

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■Design Considerations●Design guide

1) Prevention of detection error

To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external light.

2) Position of opaque board

Opaque board shall be installed at place 1.6mm or more from the top of elements.(Example)

1.6mm or more1.6mm or more

This product is not designed against irradiation and incorporates non-coherent IRED.

●Degradation

In general, the emission of the IRED used in photointerrupter will degrade over time.

In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.

●Parts

This product is assembled using the below parts.

• Photodetector (qty. : 1)

CategoryPhototransistor

MaterialSilicon (Si)

Maximum Sensitivity wavelength (nm)

930

Sensitivity wavelength (nm)700 to 1 200

Response time (μs)

20

• Photo emitter (qty. : 1)

CategoryInfrared emitting diode(non-coherent)MaterialGallium arsenide (GaAs)Maximum light emitting wavelength (nm)950I/O Frequency (MHz)0.3 • Material

Case

Black polyphernylene

sulfi de resin (UL94 V-0)

Lead frame42Alloy

Lead frame platingSnCu plating

Sheet No.: D3-A00601EN

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GP1S094HCZ0F

■Manufacturing Guidelines●Soldering MethodFlow Soldering:

Soldering should be completed below 260˚C and within 5 s.Please solder within one time.

Soldering area is 1mm or more away from the bottom of housing.Please take care not to let any extcrhal force exert on lead pins.

Please don't do soldering with preheating, and please don't do soldering by refl ow.

Hand soldering

Hand soldering should be completed within 3 s when the point of solder iron is below 350̊C.Please solder within one time.

Please don't touch the terminals directly by soldering iron.Soldered product shall treat at normal temperature.

Other notice

Please take care not to let any external force exert on lead pins.

Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions.

●Cleaning instructionsSolvent cleaning :

Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.

Ultrasonic cleaning :

Do not execute ultrasonic cleaning.

Recommended solvent materials :

Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.

●Presence of ODC

This product shall not contain the following materials.

And they are not used in the production process for this product.

Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).

•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).

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cation■Package specifi

●Sleeve packagePackage materials

Sleeve : PolyphernyleneStopper : Styrene-Elastomer

Package method

MAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless stoppers.

MAX. 50 sleeves in one case.

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■Important Notices

· The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices.

· Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifi cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice.

· Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions:

(i) The devices in this publication are designed for use in general electronic equipment designs such as:--- Personal computers--- Offi ce automation equipment

--- Telecommunication equipment [terminal]--- Test and measurement equipment--- Industrial control

--- Audio visual equipment--- Consumer electronics

(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection

with equipment that requires higher reliability such as:--- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.)--- Traffi c signals

--- Gas leakage sensor breakers--- Alarm equipment

--- Various safety devices, etc.

(iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as:--- Space applications

--- Telecommunication equipment [trunk lines]--- Nuclear power control equipment

--- Medical and other life support equipment (e.g., scuba).· If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices.

· This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party.· Contact and consult with a SHARP representative if there are any questions about the contents of this publication.

[H127]Sheet No.: D3-A00601EN

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