AP4800AGM[1]

RoHS-compliant Product

Advanced Power Electronics Corp.▼ Simple Drive Requirement▼ Low On-resistance

▼ Fast Switching Characteristic

DDD

D

N-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

SSSG

30V18mΩ9.6A

SO-8

Description

Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.The SO-8 package is widely preferred for commercial-industrialsurface mount applications and suited for low voltage applicationssuch as DC/DC converters.

DGSAbsolute Maximum Ratings

SymbolVDSVGS

ID@TA=25℃ID@TA=70℃IDM

PD@TA=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain Current3Continuous Drain Current3Pulsed Drain Current1Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

Rating30+259.67.7402.50.02-55 to 150-55 to 150

UnitsVVAAAW W/℃℃℃

Thermal Data

SymbolRthj-a

Parameter

Maximum Thermal Resistance, Junction-ambient3

Value50

Unit℃/W

Data and specifications subject to change without notice1

200902049

AP4800AGM

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSSRDS(ON)

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2

Test Conditions

VGS=0V, ID=250uAVGS=10V, ID=9AVGS=4.5V, ID=7AVGS=4V, ID=4A

VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrssRg

Gate Threshold VoltageForward TransconductanceDrain-Source Leakage Current Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

VDS=VGS, ID=250uAVDS=10V, ID=9AVDS=30V, VGS=0VVGS=+25V, VDS=0VID=9AVDS=15VVGS=4.5VVDS=15VID=1A

RG=3.3Ω,VGS=10VRD=15ΩVGS=0VVDS=25Vf=1.0MHzf=1.0MHz

Min.30---1---------------Typ.-1321--17.5---11.426.4772277101551451.9

Max.Units-1828403-125+10018------1350--3

VmΩmΩmΩVSuAuAnAnCnCnCnsnsnsnspFpFpFΩ

Drain-Source Leakage Current (Tj=70oC)VDS=24V, VGS=0V

Source-Drain Diode

SymbolVSD

Parameter

Forward On Voltage2Reverse Recovery Time2Reverse Recovery Charge

Test Conditions

IS=2.1A, VGS=0VIS=9A, VGS=0V,dI/dt=100A/µs

Min.---Typ.-2414

Max.Units1.2--VnsnC

trr

Qrr

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION OR DESIGN.

2

AP4800AGM

4040TA=25CoID , Drain Current (A)20VG=3.0VID , Drain Current (A)30 10V7.0V5.0V4.5VTA=150Co30 10V7.0V5.0V4.5V20VG=3.0V1010001234001234VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics181.6ID=7ATA=25℃16ID=9AVG=10V1.4Normalized RDS(ON)246810RDS(ON) (mΩ)141.2121.0100.880.6-50050100150VGS , Gate-to-Source Voltage (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

1.4108IS(A)6Tj=150oC4Tj=25oCNormalized VGS(th) (V)1.21.00.8200.600.20.40.60.811.2-50050100150VSD , Source-to-Drain Voltage (V)Tj , Junction Temperature (oC) Fig 5. Forward Characteristic of Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

3

AP4800AGM

121000f=1.0MHzID=9AVGS , Gate to Source Voltage (V)10Ciss8VDS=15V64C (pF)2CossCrss100051015202515913172125290QG , Total Gate Charge (nC)VDS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics1001Normalized Thermal Response (Rthja)Duty factor=0.510100us0.2ID (A)1ms10.10.110ms100ms1sTA=25CSingle Pulse0.010.11101000.05PDMtT0.020.1oDC0.01Duty factor = t/TPeak Tj = PDM x Rthja + TaRthia=125 ℃/WSingle Pulse0.010.00010.0010.010.11101001000VDS , Drain-to-Source Voltage (V)t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal ImpedanceVDS90%VGQG4.5VQGSQGD10%VGStd(on)trtd(off)tfChargeQ Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4