Method of fabricating an electrically alterable re

专利名称：Method of fabricating an electrically

alterable resistive component on aninsulating layer above a semiconductorsubstrate

发明人：Bruce B. Roesner申请号：US08/133479申请日：19931007公开号：US05407851A公开日：19950418

摘要：A memory cell includes a pair of spaced apart conductors on an insulating layer,and a novel electrically alterable resistive component between the conductors. Thisresistive component consists essentially of a single element semiconductor selectedfrom the group of Si, Ge, C, and . alpha.-Sn, having a crystalline grain size which is smallerthan polycrystalline. Dopant atoms in the semiconductor are limited to be less than10.sup.17 atoms/CM.sup.3 ; and, such a doping range includes zero doping. Processtemperatures are limited such that all dopant atoms are interstitial in the semiconductorcrystals and not substitutional.

申请人：UNISYS CORPORATION

代理人：Charles J. Fassbender,Mark T. Starr,Stanton D. Weinstein

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