POWER SEMICONDUCTOR DEVICE

专利名称：POWER SEMICONDUCTOR DEVICE发明人：Hiroshi OHTA,Yasuto SUMI,Kiyoshi

KIMURA,Junji SUZUKI,HiroyukiIRIFUNE,Wataru SAITO,Syotaro ONO

申请号：US13234802申请日：20110916

公开号：US20120074491A1公开日：20120329

专利附图：

摘要：In general, according to one embodiment, a power semiconductor deviceincludes a first pillar region, a second pillar region, and an epitaxial layer of a first

conductivity type on a first semiconductor layer. The first pillar region is composed of aplurality of first pillar layers of a second conductivity type and a plurality of second pillarlayers of the first conductivity type alternately arranged along a first direction. Thesecond pillar region is adjacent to the first pillar region along the first direction andincludes a third pillar layer of the second conductivity type, a fourth pillar layer of thefirst conductivity type, and a fifth pillar layer of the second conductivity type in this orderalong the first direction. A plurality of second base layers of the second conductivity typeelectrically connected, respectively, onto the third pillar layer and the fifth pillar layerand spaced from each other.

申请人：Hiroshi OHTA,Yasuto SUMI,Kiyoshi KIMURA,Junji SUZUKI,HiroyukiIRIFUNE,Wataru SAITO,Syotaro ONO

地址：Hyogo-ken JP,Hyogo-ken JP,Hyogo-ken JP,Hyogo-ken JP,Hyogo-kenJP,Kanagawa-ken JP,Kanagawa-ken JP

国籍：JP,JP,JP,JP,JP,JP,JP

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