Method for forming a strained transistor by stress
来源：华佗健康网
专利内容由知识产权出版社提供
专利名称：Method for forming a strained transistor by
stress memorization based on a stressedimplantation mask
发明人：Frank Wirbeleit,Roman Boschke,Martin
Gerhardt
申请号：US13108087申请日：20110516公开号：US09117929B2公开日：20150825
专利附图：
摘要：By using an implantation mask having a high intrinsic stress, SMT sequences may
be provided in which additional lithography steps may be avoided. Consequently, a strainsource may be provided without significantly contributing to the overall processcomplexity.
申请人：Frank Wirbeleit,Roman Boschke,Martin Gerhardt
地址：Dresden DE,Dresden DE,Dresden DE
国籍：DE,DE,DE
代理机构：Amerson Law Firm, PLLC
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