Interconnect structure and method for forming the

专利名称：Interconnect structure and method for

forming the same

发明人：Chih-Chao Yang,Louis C. Hsu,Rajiv V. Joshi申请号：US11216198申请日：20050831公开号：US07727888B2公开日：20100601

专利附图：

摘要：An interconnect structure and a method for forming the same are described.Specifically, under the present invention, a gouge is created within a via formed in theinterconnect structure before any trenches are formed. This prevents the above-

mentioned trench damage from occurring. That is, the bottom surface of the trencheswill have a roughness of less than approximately 20 nm, and preferably less thanapproximately 10 nm. In addition to the via, gouge and trench(es), the interconnectstructure of the present invention includes at least two levels of metal wiring. Further, ina typical embodiment, the interconnect structure utilizes any dielectrics having adielectric constant no greater than approximately 5.0.

申请人：Chih-Chao Yang,Louis C. Hsu,Rajiv V. Joshi

地址：Poughkeepsie NY US,Fishkill NY US,Yorktown Heights NY US

国籍：US,US,US

代理机构：Hoffman Warnick LLC

代理人：Brian Verminski

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