PHASE CHANGE MEMORY DEVICE, MANUFACTURING METHOD T

专利名称：PHASE CHANGE MEMORY DEVICE,

MANUFACTURING METHOD THEREOF ANDOPERATING METHOD THEREOF

发明人：Hee Bok KANG,Suk Kyoung HONG申请号：US12134388申请日：20080606

公开号：US20090067228A1公开日：20090312

专利附图：

摘要：A phase change memory (PCM) device, a manufacturing technique of making thePCM device, and a way of operating the PCM device is presented. The PCM device is

structured to have a silicon on insulator type substrate that provides an advantage ofthermally insulating the active area of the PCM device without the need for an additionalinsulation layer. The PCM device has a phase change resistor PCR that has one terminalconnected to a word line and the other terminal connected in common to the N-terminals of two PN diodes in which the P-terminals are connected in common to the bitline. As a result, a current flowing through the phase change resistor PCR is doubledwhich results in doubling the cell driving capacity.

申请人：Hee Bok KANG,Suk Kyoung HONG

地址：Chungcheongbuk-do KR,Gyeonggi-do KR

国籍：KR,KR

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