Method of forming zinc oxide film, method of produ

专利名称：Method of forming zinc oxide film, method

of producing semiconductor elementsubstrate using same, and method ofproducing photovoltaic element

发明人：Yukie Shishido申请号：US10187810申请日：20020703

公开号：US20030085129A1公开日：20030508

专利附图：

摘要：A ZnO film forming method is a method of letting an electric current flow

between a conductive substrate immersed in at least one forming bath containing atleast zinc ions, and a counter electrode immersed in the at least one forming bath,thereby forming a zinc oxide film on the conductive substrate, wherein deposition of azinc oxide film on a back surface of the conductive substrate is decreased by adjusting (1)a distance between the back surface of the conductive substrate and a region facing atleast the periphery of the back surface in a surface facing the back surface, and (2) anelectric conductivity of the forming bath, and (3) an electric current density between theconductive substrate and the counter electrode, thereby establishing a mass productiontechnology based on electrolytic deposition of the zinc oxide film as a low costtechnology and providing the method of forming the ZnO film with high performanceand excellent adhesion to the substrate while reducing the amount of the film depositedon the back surface.

申请人：SHISHIDO YUKIE

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