2SC1212资料

Silicon NPN Epitaxial

Application

Low frequency power amplifier

Outline

TO-126 MOD11. Emitter2. Collector3. Base23Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item

Collector to base voltageCollector to emitter voltageEmitter to base voltageCollector current

Collector power dissipationJunction temperatureStorage temperatureNote:

1.Value at TC = 25°C

SymbolVCBOVCEOVEBOICPCPC*1TjTstg

2SC12125050410.758150–55 to +150

2SC1212A8080410.758150–55 to +150

UnitVVVAWW°C°C

2SC1212, 2SC1212A

Electrical Characteristics (Ta = 25°C)

2SC1212

Item

Collector to basebreakdown voltageCollector to emitterbreakdown voltageEmitter to basebreakdown voltageCollector cutoff current

SymbolV(BR)CBOV(BR)CEOV(BR)EBOICBOhFE

Base to emitter voltageVBECollector to emittersaturation voltageNote:B60 to 120

VCE(sat)

Min50504—6020———

Typ——————0.650.75160

Max———5200—1.01.5—

2SC1212AMin80804—6020———

Typ——————0.650.75160

Max———5200—1.01.5—

VVMHzUnitVVVµA

Test conditionsIC = 1 mA, IE = 0IC = 10 mA, RBE = ∞IE = 1 mA, IC = 0VCB = 50 V, IE = 0VCE = 4 V, IC = 50 mAVCE = 4 V, IC = 1 A(pulse test)

VCE = 4 V, IC = 50 mAIC = 1 A, IB = 0.1 A(pulse test)

VCE = 4 V, IC = 30 mA

DC current tarnsfer ratiohFE*1

Gain bandwidth productfT

1.The 2SC1212 and 2SC1212A are grouped by hFE as follows.

C

100 to 200

Maximum Collector Dissipation Curve1.0Collector power dissipation PC (W)Collector power dissipation PC (W)12Maximum Collector Dissipation Curve0.7580.540.25050100150Ambient temperature Ta (°C)200050100Case temperature TC (°C)1502

2SC1212, 2SC1212A

Typical Output Characteristics200Collector current IC (mA)16012080401.61.01.41.21.00.80.60.40.2 mAIB = 002050103040Collector to emitter voltage VCE (V)0TC = 25°CCollector current IC (A)0.80.60.40.2Typical Output Characteristics18161412108642 mAIB = 025134Collector to emitter voltage VCE (V)TC = 25°CDC Current Transfer Ratio vs.Collector Current180VCE = 4 VDC current transfer ratio hFE16014012010080600.010.02TC = 75°CCollector Current IC (A)250.31.0Typical Transfer CharacteristicsVCE = 4 V–250.10.030.051.00.20.5Collector current IC (A)1.00.0100.20.40.60.81.01.2Base to emitter voltage VBE (V)TC = –75°C25–253

元器件交易网www.cecb2b.com

8.0 ± 0.5Unit: mm

φ3.1 +0.15–0.12.7 ± 0.4°012210°5.370. 0. 0± ± 120°±0.3 .712.311.15.0 ± 6.510.82.29 ± 0.52.29 ± 0.50.551.2Hitachi CodeTO-126 ModJEDEC—EIAJ—Weight (reference value)0.67 gCautions

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4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installation

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