Sloped via contacts

专利名称：Sloped via contacts发明人：Frank S Geefay,Qing Gan申请号：US10826803申请日：20040415公开号：US06903012B2公开日：20050607

专利附图：

摘要：A sloped via contact is used to connect a contact on the front side of a wafer toa contact on the back side of the wafer. The walls of a small (less than 50-80 micronswide) via have typically been difficult to coat with metal. The present invention forms asmall via with sloped walls, allowing easy access to the inside walls of the via for metal

sputtering or plating. The small via can be formed using a dry etch process such as thewell-known deep reactive ion etching (DRIE) process. Using any isotropic plasma etchprocess, the walls of the via are further etched from the wafer backside to create slopedwalls in the via. The via is then coated with metal to make it conductive.

申请人：Frank S Geefay,Qing Gan

地址：Cupertino CA US,Fremont CA US

国籍：US,US

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