GD50PIT120C5SN_G8

GD50PIT120C5SN_G8 IGBT Module STARPOWER SEMICONDUCTOR IGBT GD50PIT120C5SN_G8 Molding Type Module 1200V/50A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features        Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175℃ Low inductance case Fast & soft reverse recovery anti-parallel FWD Isolated copper baseplate using DBC technology Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 1/9 Preliminary GD50PIT120C5SN_G8 IGBT Module IGBT-inverter TC=25℃ unless otherwise noted Maximum Rated Values Symbol VCES VGES IC ICM Ptot Description Collector-Emitter Voltage @ Tj=25℃ Gate-Emitter Voltage @ Tj=25℃ Collector Current @ TC=25℃ @ TC=100℃ Pulsed Collector Current tp=1ms Total Power Dissipation @ Tj=175℃ GD50PIT120C5SN_G8 1200 ±30 100 50 100 285 Units V V A A W Off Characteristics Symbol V(BR)CES ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Test Conditions Tj=25℃ VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃ Min. 1200 Typ. Max. Units V mA nA 5.0 400 On Characteristics Symbol VGE(th) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions Min. IC=2.0mA,VCE=VGE, 5.0 Tj=25℃ IC=50A,VGE=15V, Tj=25℃ IC=50A,VGE=15V, Tj=175℃ Typ. Max. Units 1.70 2.10 6.5 2.15 V V VCE(sat) ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 2/9 Preliminary GD50PIT120C5SN_G8 IGBT Module Switching Characteristics Symbol td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Cres QG ISC Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Reverse Transfer Capacitance Gate Charge SC Data Test Conditions Min. VCE=30V,f=1Mhz, VGE=0V VCC=600V,IC=50A, VGE=15V tP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V Typ. Max. Units 200 ns 43 ns 266 ns 295 ns 3.01 3.35 200 47 280 400 3.62 5.10 4.50 0.15 300 TBD mJ mJ ns ns ns ns mJ mJ nF nF nC A VCC=600V,IC=50A, RG=15Ω,VGE=±15V, Tj=25℃ VCC=600V,IC=50A, RG=15Ω,VGE=±15V, Tj=125℃ Diode-inverter TC=25℃ unless otherwise noted Maximum Rated Values Symbol VRRM IF IFRM Description Repetitive Peak Reverse Voltage @ Tj=25℃ DC Forward Current Repetitive Peak Forward Current tp=1ms GD50PIT120C5SN_G8 1200 50 100 Units V A A Characteristics Values Symbol VF Qr IRM Erec Test Conditions T=25℃ IF=50A,VGE=0V jTj=125℃ Tj=25℃ Recovered Charge Tj=125℃ IF=50A, Tj=25℃ VR=600V, Peak Reverse Recovery Current RG=15Ω, Tj=125℃ Tj=25℃ Reverse Recovery VGE=-15V Energy Tj=125℃ Parameter Diode Forward Voltage Min. Typ. Max. Units 1.70 2.10 V 1.65 3.0 μC 7.2 46 A 56 2.00 mJ 3.50 ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 3/9 Preliminary GD50PIT120C5SN_G8 IGBT Module Diode-rectifier TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description VRRM Repetitive Peak Reverse Voltage @ Tj=25℃ IF(AV) Average On-state Current @ TC=80℃ Maximum RMS Current At Rectifier Output IRMSM @ TC=80℃ Surge Forward Current IFSM VR=0V,tp=10ms,Tj=45℃ I2t I2t-value,VR=0V,tp=10ms,Tj=45℃ GD50PIT120C5SN_G8 Units 1600 V 50 A 80 600 1800 A A A2s Characteristics Values Symbol VF IR Parameter Test Conditions Diode Forward IF=50A Tj=150℃ Voltage Reverse Current Tj=150℃,VR=1600V Min. Typ. Max. Units 1.30 3.0 V mA IGBT-brake-chopper TC=25℃ unless otherwise noted Maximum Rated Values Symbol VCES VGES IC ICM Ptot Description Collector-Emitter Voltage @ Tj=25℃ Gate-Emitter Voltage @ Tj=25℃ Collector Current @ TC=25℃ @ TC=100℃ Pulsed Collector Current tp=1ms Total Power Dissipation @ Tj=175℃ GD50PIT120C5SN_G8 1200 ±30 50 25 50 192 Units V V A A W Off Characteristics Symbol V(BR)CES ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector Cut-Off Current Gate-Emitter Leakage Current Test Conditions Tj=25℃ VCE=VCES,VGE=0V, Tj=25℃ VGE=VGES,VCE=0V, Tj=25℃ Min. 1200 Typ. Max. Units V mA nA 5.0 400 ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 4/9 Preliminary GD50PIT120C5SN_G8 IGBT Module On Characteristics Symbol VGE(th) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions Min. IC=1.0mA,VCE=VGE, 5.0 Tj=25℃ IC=25A,VGE=15V, Tj=25℃ IC=25A,VGE=15V, Tj=175℃ Typ. Max. Units 6.5 2.15 V 1.70 2.10 VCE(sat) V Switching Characteristics Symbol td(on) tr td(off) tf Eon Eoff td(on) tr td(off) tf Eon Eoff Cies Cres QG ISC Parameter Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Input Capacitance Reverse Transfer Capacitance Gate Charge SC Data Test Conditions Min. VCC=600V,IC=25A, RG=18Ω,VGE=±15V, Tj=25℃ Typ. Max. Units 147 ns 26 ns 201 ns 337 ns 1.64 1.65 143 28 216 400 1.93 2.38 2.40 0.08 180 TBD mJ mJ ns ns ns ns mJ mJ nF nF nC A VCC=600V,IC=25A, RG=18Ω,VGE=±15V, Tj=125℃ VCE=30V,f=1Mhz, VGE=0V VCC=600V,IC=25A, VGE=15V tP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 5/9 Preliminary GD50PIT120C5SN_G8 IGBT Module Diode-brake-chopper TC=25℃ unless otherwise noted Maximum Rated Values Symbol VRRM IF IFRM Description Repetitive Peak Reverse Voltage @ Tj=25℃ DC Forward Current Repetitive Peak Forward Current tp=1ms GD50PIT120C5SN_G8 1200 25 50 Units V A A Characteristics Values Symbol VF Qr IRM Erec Parameter Diode Forward Voltage Test Conditions Tj=25℃ IF=25A,VGE=0V Tj=125℃ Tj=25℃ Recovered Charge Tj=125℃ IF=25A, Tj=25℃ Peak Reverse VR=600V, Recovery Current RG=18Ω, Tj=125℃ Tj=25℃ Reverse Recovery VGE=-15V Energy Tj=125℃ Min. Typ. Max. Units 2.10 2.50 V 2.15 1.3 μC 2.0 31 A 38 0.68 mJ 1.45 Electrical Characteristics of NTC TC=25℃ unless otherwise noted Symbol Parameter Test Conditions R25 Rated Resistance ∆R/R Deviation of R100 TC=100℃,R100=493.3Ω P25 Power Dissipation R2=R25exp[B25/50(1/T2-B25/50 B-value 1/(298.15K))] Min. -5 Typ. Max. Units 5.0 kΩ 5 % 20.0 mW 3375 K ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 6/9 Preliminary GD50PIT120C5SN_G8 IGBT Module IGBT Module Symbol VISO LCE RCC’+EE’ RAA’+CC’ RθJC RθCS Tjmax Tjop TSTG M G Parameter Isolation Voltage RMS,f=50Hz,t=1min Stray Inductance Module Lead Resistance,Terminal to Chip @ TC=25℃ Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake-chopper) Junction-to-Case (per Diode-brake-chopper) Case-to-Sink (Conductive grease applied) Maximum Junction Temperature (inverter, brake) Maximum Junction Temperature(rectifier) Operating Junction Temperature (inverter, brake) Operating Junction Temperature(rectifier) Storage Temperature Range Mounting Torque, Screw:M5 Weight of Module Min. 4000 Typ. 60 4.00 2.00 0.02 180 Max. 0.527 0.862 0.908 0.780 1.326 175 150 150 125 125 6.0 Units V nH mΩ -40 -40 -40 3.0 K/W K/W ℃ ℃ ℃ N.m g ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 7/9 Preliminary GD50PIT120C5SN_G8 IGBT Module Equivalent Circuit Schematic Package Dimensions Dimensions in Millimeters ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 8/9 Preliminary GD50PIT120C5SN_G8 IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2013 STARPOWER Semiconductor Ltd. 8/26/2013 9/9 Preliminary